smd type transistors FCX1151A features 2w power dissipation. 5a peak pulse current. excellent hfe characteristics up to 5 amps. extremely low saturation voltage e.g. 60mv typ. extremely low equivalent on-resistance. r ce(sat) 66m at 3a. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -45 v collector-emitter voltage v ceo -40 v emitter-base voltage v ebo -5 v continuous collector current i cm -5 a peak pulse current *3 i c -3 a base current i b -500 ma 1*1 w 2*2 w operating and storage temperature range t j, t stg -55to+150 *1 recommended ptot calculated using fr4 measuring 15x15x0.6mm *2 maximum power dissipation is calculated assuming that the device is mounted on fr4 substrate measuring 40x40x0.6mm *3 measured under pulsed conditions. pulse width=300s. duty cycle 2% power dissipation p tot smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors s m d ty p e i c t r a n s i s t o r s s m d ty p e smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v (br)cbo i c =-100a -45 v collector-emitter breakdown voltage * v (br)ceo i c =-10ma -40 v emitter-base breakdown voltage v (br)ebo i e =-100a -5 v collector cut-off current i cbo v cb =-36v -0.3 -100 na collector emitter cut-off current i ces v ce =-32v -0.3 -100 na emitter cut-off current i ebo v eb =-4v -0.3 -100 na collector-emitter saturation voltage * v ce( sat) i c =-0.1a, i b =-1ma i c =-0.5a, i b =-5ma i c =-1a, i b =-20ma i c =-3a, i b =-250ma -60 -120 -140 -200 -90 -180 -220 -300 mv base-emitter saturation voltage * v be( sat) i c =-3a, i b =-250ma -985 -1050 mv base-emitter on voltage * v be(on ) i c =-3a, v ce =-2v -850 -950 mv static forward current transfer ratio * h fe i c =-10ma,v ce =-2v i c =-0.5a,v ce =-2v i c =-2a,v ce =-2v i c =-3a,v ce =-2v i c =-5a,v ce =-2v 270 250 180 100 450 400 300 190 45 800 transitional frequency f t i c =-50ma, v ce =-10v, f=50mhz 145 mhz output capacitance c obo v cb =-10v, f=1mhz 40 pf turn-on time t (on) i c =-2a, v cc =-30v 170 ns turn-off time t (off) i b1 =i b2 =-20ma 460 ns * pulse test: tp = 300 s; d 0.02. marking marking 151 smd type transistors FCX1151A smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors s m d ty p e i c t r a n s i s t o r s s m d ty p e smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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